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The following original articles have been contributed by members of the CTI community and visitors to this website.
The following product recommendations have been submitted by members of the CTI community and visitors to this website. Inclusion of the information does not necessarily imply endorsement or recommendation of the product by the SemiconductorCTI Website.
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Competitive Technical Intelligence is the fourth volume in the Topics in CI series, published by SCIP’s Competitive Intelligence Foundation. The general topic covers the concept and practice of defining a competitive technical intelligence function (CTI), the elements and knowledge that are required to.... For more details click here.
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Key NAND Flash Memory Design Intellectual Property - Abstract. Report No. FI-NFL-IPD-0709 July, 2009, published by Forward Insights. Technical innovations, particularly in NAND flash memory design are key enablers
of multi-level cell NAND flash memories, especially 3-bit per cell and 4-bit per
cell technologies. This report identifies important intellectual property
related to sensing architectures, source voltage noise compensation, programming
algorithms, disturbs reduction, temperature compensation, high voltage switch,
coding schemes and error correction codes from Hynix, Micron, Samsung, SanDisk,
STMicroelectronics and Toshiba. For more details click here.
- Comparison of 3-bit per cell NAND Flash Memories - Abstract. Report No. FI-NFL-3BC-0809 August, 2009, published by Forward Insights. This report
compares the 3-bit per cell NAND flash memory architectures and key parameters
of SanDisk/Toshiba, Hynix and Samsung and analyzes the advantages and
disadvantages of each implementation. For more details click here.
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